NTD4813N-1G
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onsemi NTD4813N-1G

Manufacturer No:
NTD4813N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4813N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 7.6A/40A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.9 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.27W (Ta), 35.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD4813N-1G NTD4815N-1G   NTD4813NH-1G   NTD4863N-1G   NTD4913N-1G   NTD3813N-1G   NTD4810N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 25 V 30 V 16 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 40A (Tc) 6.9A (Ta), 35A (Tc) 7.6A (Ta), 40A (Tc) 9.2A (Ta), 49A (Tc) 7.7A (Ta), 32A (Tc) 9.6A (Ta), 51A (Tc) 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V 15mOhm @ 30A, 10V 13mOhm @ 30A, 10V 9.3mOhm @ 30A, 10V 10.5mOhm @ 30A, 10V 8.75mOhm @ 15A, 10V 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 4.5 V 6.6 nC @ 4.5 V 10 nC @ 4.5 V 13.5 nC @ 4.5 V 13 nC @ 10 V 12.8 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 12 V 770 pF @ 12 V 940 pF @ 12 V 990 pF @ 12 V 1013 pF @ 15 V 963 pF @ 12 V 1350 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc) 1.26W (Ta), 32.6W (Tc) 1.27W (Ta), 35.3W (Tc) 1.27W (Ta), 36.6W (Tc) 1.36W (Ta), 24W (Tc) 1.2W (Ta), 34.9W (Tc) 1.4W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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