NTD4810NH-35G
  • Share:

onsemi NTD4810NH-35G

Manufacturer No:
NTD4810NH-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4810NH-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9A/54A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1225 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.28W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
0 Remaining View Similar

In Stock

-
559

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD4810NH-35G NTD4813NH-35G   NTD4815NH-35G   NTD4810N-35G  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 54A (Tc) 7.6A (Ta), 40A (Tc) 6.9A (Ta), 35A (Tc) 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 10mOhm @ 30A, 10V 13mOhm @ 30A, 10V 15mOhm @ 30A, 10V 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 10 nC @ 4.5 V 6.8 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1225 pF @ 12 V 940 pF @ 12 V 845 pF @ 12 V 1350 pF @ 12 V
FET Feature - - - -
Power Dissipation (Max) 1.28W (Ta), 50W (Tc) 1.27W (Ta), 35.3W (Tc) 1.26W (Ta), 32.6W (Tc) 1.4W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

Related Product By Categories

MMSF4N01HDR2
MMSF4N01HDR2
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
FQI2N30TU
FQI2N30TU
Fairchild Semiconductor
MOSFET N-CH 300V 2.1A I2PAK
BSF030NE2LQXUMA1
BSF030NE2LQXUMA1
Infineon Technologies
MOSFET N-CH 25V 24A/75A 2WDSON
STFI34N65M5
STFI34N65M5
STMicroelectronics
MOSFET N CH 650V 28A I2PAKFP
IPA65R380E6XKSA1
IPA65R380E6XKSA1
Infineon Technologies
MOSFET N-CH 650V 10.6A TO220-FP
FDMC7696
FDMC7696
onsemi
MOSFET N-CH 30V 12A/20A 8MLP
IRFR2307ZTRLPBF
IRFR2307ZTRLPBF
Infineon Technologies
MOSFET N-CH 75V 42A DPAK
IRF820LPBF
IRF820LPBF
Vishay Siliconix
MOSFET N-CH 500V 2.5A I2PAK
DMT4005SCT
DMT4005SCT
Diodes Incorporated
MOSFET N-CH 40V 100A TO220AB
HUFA75637S3S
HUFA75637S3S
onsemi
MOSFET N-CH 100V 44A D2PAK
IRF3706STRRPBF
IRF3706STRRPBF
Infineon Technologies
MOSFET N-CH 20V 77A D2PAK
AOT2608L
AOT2608L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 11A/72A TO220

Related Product By Brand

NCV8872SEPGEVB
NCV8872SEPGEVB
onsemi
EVAL BOARD NCV8872SEPG
NCV8871BSTGEVB
NCV8871BSTGEVB
onsemi
BOARD EVAL NCV8871BST BOOST CTLR
MM3Z3V3T1G
MM3Z3V3T1G
onsemi
DIODE ZENER 3.3V 300MW SOD323
BSP52
BSP52
onsemi
TRANS NPN DARL 80V 0.8A SOT223-4
FQPF2N60C
FQPF2N60C
onsemi
MOSFET N-CH 600V 2A TO220F
NTMFS5H419NLT1G
NTMFS5H419NLT1G
onsemi
MOSFET N-CH 40V 29A/155A 5DFN
2SK932-24-TB-E
2SK932-24-TB-E
onsemi
JFET N-CH 50MA 200MW CP
MC74VHC1G125DFT1G
MC74VHC1G125DFT1G
onsemi
IC BUFFER NON-INVERT 5.5V SC88A
MC100LVEL33DTR2G
MC100LVEL33DTR2G
onsemi
IC DIVIDER DIV X4 DIFF 8-TSSOP
NB100LVEP91DW
NB100LVEP91DW
onsemi
IC XLATOR TRPL PECL-NECL 20SOIC
FAN5624UMPX
FAN5624UMPX
onsemi
IC LED DRV LIN SGL WR 10UMLP
NCV5500DTADJRKG
NCV5500DTADJRKG
onsemi
IC REG LIN POS ADJ 500MA DPAK-5