NTD4809NT4G
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onsemi NTD4809NT4G

Manufacturer No:
NTD4809NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTD4809NT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9.6A/58A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD4809NT4G NTD4909NT4G   NTD4804NT4G   NTD4805NT4G   NTD4806NT4G   NTD4808NT4G   NTD4809NAT4G   NTD4809NHT4G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V 17.5 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 1314 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2155 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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