NTD4809NT4G
  • Share:

onsemi NTD4809NT4G

Manufacturer No:
NTD4809NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTD4809NT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9.6A/58A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.67
369

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD4809NT4G NTD4909NT4G   NTD4804NT4G   NTD4805NT4G   NTD4806NT4G   NTD4808NT4G   NTD4809NAT4G   NTD4809NHT4G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V 17.5 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 1314 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2155 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

DN3545N8-G
DN3545N8-G
Microchip Technology
MOSFET N-CH 450V 200MA TO243AA
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
ZVN2106GTA
ZVN2106GTA
Diodes Incorporated
MOSFET N-CH 60V 710MA SOT223
CDM3-800 TR13 PBFREE
CDM3-800 TR13 PBFREE
Central Semiconductor Corp
MOSFET N-CH 800V 3A DPAK
STW70N60DM2
STW70N60DM2
STMicroelectronics
MOSFET N-CH 600V 66A TO247
DMN2024UQ-13
DMN2024UQ-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 1
GKI10526
GKI10526
Sanken
MOSFET N-CH 100V 4A 8DFN
APT8056BVRG
APT8056BVRG
Microchip Technology
MOSFET N-CH 800V 16A TO247
IRF7421D1TR
IRF7421D1TR
Infineon Technologies
MOSFET N-CH 30V 5.8A 8SO
TK12A60U(Q,M)
TK12A60U(Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 12A TO220SIS
AO3422L
AO3422L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 55V 2.1A SOT23-3
RSS105N03TB
RSS105N03TB
Rohm Semiconductor
MOSFET N-CH 30V 10.5A 8SOP

Related Product By Brand

ICTE-36RL4G
ICTE-36RL4G
onsemi
TVS DIODE 36VWM 65.2VC AXIAL
2SC6095-TD-E
2SC6095-TD-E
onsemi
TRANS NPN 80V 2.5A PCP
FDMD82100
FDMD82100
onsemi
MOSFET 2N-CH 100V 7A 12POWER
NVMFS5C450NLWFAFT1G
NVMFS5C450NLWFAFT1G
onsemi
MOSFET N-CH 40V 110A 5DFN
MM74HCT240MTCX
MM74HCT240MTCX
onsemi
IC BUFFER INVERT 5.5V 20TSSOP
74F538PC
74F538PC
onsemi
IC DECODER 1 X 3:8 20DIP
FAN4803CP1
FAN4803CP1
onsemi
IC PFC CTR AVER CURR 67KHZ 8DIP
NCP380HMU05AATBG
NCP380HMU05AATBG
onsemi
IC PWR SWITCH P-CHAN 1:1 6UDFN
SMBT1282LT1
SMBT1282LT1
onsemi
SS SOT23 GP XSTR SPCL TR
NCV8509PDW18G
NCV8509PDW18G
onsemi
IC REG LINEAR 3.3V/1.8V 16SOIC
FOD3180T
FOD3180T
onsemi
OPTOISO 5KV 1CH GATE DRIVER 8DIP
FODM121C
FODM121C
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD