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| Part Number | NTD4809NH-1G | NTD4809N-1G | NTD4809NA-1G |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) | 9.6A (Ta), 58A (Tc) | 9.6A (Ta), 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V | 4.5V, 11.5V | 4.5V, 11.5V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V | 9mOhm @ 30A, 10V | 9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | 13 nC @ 4.5 V | 13 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 12 V | 1456 pF @ 12 V | 1456 pF @ 12 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) | 1.4W (Ta), 52W (Tc) | 1.3W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I-PAK | I-PAK | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
