NTD4809N-1G
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onsemi NTD4809N-1G

Manufacturer No:
NTD4809N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4809N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 9.6A/58A IPAK
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD4809N-1G NTD4809NA-1G   NTD4809NH-1G   NTD4909N-1G   NTD4804N-1G   NTD4805N-1G   NTD4806N-1G   NTD4808N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc) 8.8A (Ta), 41A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V 17.5 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 1456 pF @ 12 V 2155 pF @ 12 V 1314 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc) 1.37W (Ta), 29.4W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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