NTD4806N-35G
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onsemi NTD4806N-35G

Manufacturer No:
NTD4806N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4806N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11.3A/79A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2142 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number NTD4806N-35G NTD4806NA-35G   NTD4808N-35G   NTD4809N-35G   NTD4856N-35G   NTD4906N-35G   NTD4804N-35G   NTD4805N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 25 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 79A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 13.3A (Ta), 89A (Tc) 10.3A (Ta), 54A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V - 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2142 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2241 pF @ 12 V 1932 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 68W (Tc) - 1.4W (Ta), 54.6W (Tc) 1.4W (Ta), 52W (Tc) 1.33W (Ta), 60W (Tc) 1.38W (Ta), 37.5W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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