NTD4806N-1G
  • Share:

onsemi NTD4806N-1G

Manufacturer No:
NTD4806N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4806N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11.3A/79A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2142 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
594

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD4806N-1G NTD4806NA-1G   NTD4808N-1G   NTD4809N-1G   NTD4856N-1G   NTD4906N-1G   NTD4804N-1G   NTD4805N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 25 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 79A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 13.3A (Ta), 89A (Tc) 10.3A (Ta), 54A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V - 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 27 nC @ 4.5 V 24 nC @ 10 V 40 nC @ 4.5 V 48 nC @ 11.5 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2142 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2241 pF @ 12 V 1932 pF @ 15 V 4490 pF @ 12 V 2865 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 68W (Tc) - 1.4W (Ta), 54.6W (Tc) 1.4W (Ta), 52W (Tc) 1.33W (Ta), 60W (Tc) 1.38W (Ta), 37.5W (Tc) 1.43W (Ta), 107W (Tc) 1.41W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

DIT050N06
DIT050N06
Diotec Semiconductor
MOSFET N-CH 60V 50A TO220AB
STP11NM60FDFP
STP11NM60FDFP
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
SQJ411EP-T1_GE3
SQJ411EP-T1_GE3
Vishay Siliconix
MOSFET P-CH 12V 60A PPAK SO-8
SIHP180N60E-GE3
SIHP180N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 19A TO220AB
IXTP3N100D2
IXTP3N100D2
IXYS
MOSFET N-CH 1000V 3A TO220AB
STD3NM60N
STD3NM60N
STMicroelectronics
MOSFET N-CH 600V 3.3A DPAK
HUFA76429P3
HUFA76429P3
Fairchild Semiconductor
MOSFET N-CH 60V 47A TO220-3
IPB097N08N3G
IPB097N08N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
IRLIZ24NPBF
IRLIZ24NPBF
Infineon Technologies
MOSFET N-CH 55V 14A TO220AB FP
SPP100N03S203
SPP100N03S203
Infineon Technologies
MOSFET N-CH 30V 100A TO220-3
TK8A60DA(STA4,Q,M)
TK8A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7.5A TO220SIS
2SK3430-AZ
2SK3430-AZ
Renesas Electronics America Inc
MOSFET N-CH 40V 80A TO220AB

Related Product By Brand

SMF28AT1
SMF28AT1
onsemi
TVS DIODE 28VWM 45.4VC SOD123FL
SMBZ2606-24LT1G
SMBZ2606-24LT1G
onsemi
DIODE ZENER .225W SPCL SOT23
NTMFSC1D6N06CL
NTMFSC1D6N06CL
onsemi
MOSFET N-CH 60V 36A/235A 8DFN
MC100E210FN
MC100E210FN
onsemi
IC CLK BUF 1:4/1:5 700MHZ 28PLCC
MCCS142238DWR2
MCCS142238DWR2
onsemi
SCSI TERMINATOR, 18-LINE, 110OHM
LV4904V-TLM-E
LV4904V-TLM-E
onsemi
IC AMP CLASS D STER 15W 44SSOPJ
MC10H121MELG
MC10H121MELG
onsemi
IC GATE OR/AND 4WIDE 16-SOEIAJ
MC74ACT253DR2
MC74ACT253DR2
onsemi
IC MUX DUAL 4INPUT 3ST 16-SOIC
NCP1395ADR2G
NCP1395ADR2G
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
CAT1640LI-45-G
CAT1640LI-45-G
onsemi
IC SUPERVISOR 1 CHANNEL 8DIP
FAN1582T
FAN1582T
onsemi
IC REG LINEAR POS ADJ 3A TO220-5
MOC3081SM
MOC3081SM
onsemi
OPTOISOLATOR 4.17KV TRIAC 6SMD