NTD4805N-35G
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onsemi NTD4805N-35G

Manufacturer No:
NTD4805N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4805N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12.7A/95A IPAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2865 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.41W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Part Number NTD4805N-35G NTD4815N-35G   NTD4806N-35G   NTD4808N-35G   NTD4809N-35G   NTD4855N-35G   NTD4865N-35G   NTD4905N-35G   NTD4804N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 25 V 25 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 14A (Ta), 98A (Tc) 8.5A (Ta), 44A (Tc) 12A (Ta), 67A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 11.5 V 14.1 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 32.7 nC @ 4.5 V 10.8 nC @ 4.5 V 33 nC @ 10 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2865 pF @ 12 V 770 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2950 pF @ 12 V 827 pF @ 12 V 2340 pF @ 15 V 4490 pF @ 12 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.4W (Ta), 52W (Tc) 1.35W (Ta), 66.7W (Tc) 1.27W (Ta), 33.3W (Tc) 1.4W (Ta), 44W (Tc) 1.43W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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