NTD4805N-1G
  • Share:

onsemi NTD4805N-1G

Manufacturer No:
NTD4805N-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4805N-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12.7A/95A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2865 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.41W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD4805N-1G NTD4815N-1G   NTD4806N-1G   NTD4808N-1G   NTD4809N-1G   NTD4855N-1G   NTD4865N-1G   NTD4905N-1G   NTD4804N-1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 25 V 25 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) 6.9A (Ta), 35A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 14A (Ta), 98A (Tc) 8.5A (Ta), 44A (Tc) 12A (Ta), 67A (Tc) 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 15mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 4.3mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 11.5 V 6.6 nC @ 4.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 32.7 nC @ 4.5 V 10.8 nC @ 4.5 V 33 nC @ 10 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2865 pF @ 12 V 770 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 2950 pF @ 12 V 827 pF @ 12 V 2340 pF @ 15 V 4490 pF @ 12 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 1.41W (Ta), 79W (Tc) 1.26W (Ta), 32.6W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.4W (Ta), 52W (Tc) 1.35W (Ta), 66.7W (Tc) 1.27W (Ta), 33.3W (Tc) 1.4W (Ta), 44W (Tc) 1.43W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

TSM300NB06CR RLG
TSM300NB06CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 6A/27A 8PDFN
SI7892BDP-T1-GE3
SI7892BDP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 15A PPAK SO-8
STP20NF20
STP20NF20
STMicroelectronics
MOSFET N-CH 200V 18A TO220AB
PMZ320UPEYL
PMZ320UPEYL
Nexperia USA Inc.
MOSFET P-CH 30V 1A DFN1006-3
FCD5N60TM-WS
FCD5N60TM-WS
onsemi
MOSFET N-CH 600V 4.6A DPAK
NVMYS3D3N06CLTWG
NVMYS3D3N06CLTWG
onsemi
MOSFET N-CH 60V 26A/133A 4LFPAK
IPP65R110CFDAAKSA1
IPP65R110CFDAAKSA1
Infineon Technologies
MOSFET N-CH 650V 31.2A TO220-3
PSMN063-150D,118
PSMN063-150D,118
Nexperia USA Inc.
MOSFET N-CH 150V 29A DPAK
IRFI740G
IRFI740G
Vishay Siliconix
MOSFET N-CH 400V 5.4A TO220-3
IRFR9310
IRFR9310
Vishay Siliconix
MOSFET P-CH 400V 1.8A DPAK
FQP2N40
FQP2N40
onsemi
MOSFET N-CH 400V 1.8A TO220-3
2SK2845(TE16L1,Q)
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 1A DP

Related Product By Brand

NTVB270SB-L
NTVB270SB-L
onsemi
THYRISTOR 270V 80A DO214AA
1N749A_S00Z
1N749A_S00Z
onsemi
DIODE ZENER 4.3V 500MW DO35
MKP3V240RL
MKP3V240RL
onsemi
SIDAC 220-250V 1A AXIAL
2SC5569-TD-E
2SC5569-TD-E
onsemi
TRANS NPN 50V 7A SOT89/PCP-1
KSA910YBU
KSA910YBU
onsemi
TRANS PNP 150V 0.05A TO92-3
TIP132G
TIP132G
onsemi
TRANS NPN DARL 100V 8A TO220
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
NTD4804NT4G
NTD4804NT4G
onsemi
MOSFET N-CH 30V 14.5A/124A DPAK
NTR4501NT3G
NTR4501NT3G
onsemi
MOSFET N-CH 20V 3.2A SOT23-3
FDB8442-F085
FDB8442-F085
onsemi
MOSFET N-CH 40V 28A TO263AB
MC10LVEP11DTR2
MC10LVEP11DTR2
onsemi
IC CLK BUFFER 1:2 3GHZ 8TSSOP
MC10H680FNG
MC10H680FNG
onsemi
IC TRNSLTR BIDIRECTIONAL 28PLCC