NTD4804N-35G
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onsemi NTD4804N-35G

Manufacturer No:
NTD4804N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD4804N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 14.5A/124A IPAK
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4490 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.43W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number NTD4804N-35G NTD4804NA-35G   NTD4805N-35G   NTD4806N-35G   NTD4808N-35G   NTD4809N-35G   NTD4854N-35G   NTD4904N-35G  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) 14.5A (Ta), 124A (Tc) 12.7A (Ta), 95A (Tc) 11.3A (Ta), 79A (Tc) 10A (Ta), 63A (Tc) 9.6A (Ta), 58A (Tc) 15.7A (Ta), 128A (Tc) 13A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 6mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 40 nC @ 4.5 V 48 nC @ 11.5 V 23 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 49.2 nC @ 4.5 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4490 pF @ 12 V 4490 pF @ 12 V 2865 pF @ 12 V 2142 pF @ 12 V 1538 pF @ 12 V 1456 pF @ 12 V 4600 pF @ 12 V 3052 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.43W (Ta), 107W (Tc) 1.43W (Ta), 93.75W (Tc) 1.41W (Ta), 79W (Tc) 1.4W (Ta), 68W (Tc) 1.4W (Ta), 54.6W (Tc) 1.4W (Ta), 52W (Tc) 1.43W (Ta), 93.75W (Tc) 1.4W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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