NTD3817N-35G
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onsemi NTD3817N-35G

Manufacturer No:
NTD3817N-35G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD3817N-35G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 16V 7.6A/34.5A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):16 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta), 34.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:702 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta), 25.9W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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Similar Products

Part Number NTD3817N-35G NTD3813N-35G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V 16 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 34.5A (Tc) 9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 15A, 10V 8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 4.5 V 12.8 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 702 pF @ 12 V 963 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta), 25.9W (Tc) 1.2W (Ta), 34.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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