NTD32N06LT4G
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onsemi NTD32N06LT4G

Manufacturer No:
NTD32N06LT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTD32N06LT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 32A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:28mOhm @ 16A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 93.75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD32N06LT4G NTD32N06T4G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta) 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 16A, 5V 26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 5 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1725 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 93.75W (Tj) 1.5W (Ta), 93.75W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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