NTD32N06L-1G
  • Share:

onsemi NTD32N06L-1G

Manufacturer No:
NTD32N06L-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD32N06L-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 32A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:28mOhm @ 16A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 93.75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
530

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTD32N06L-1G NTD32N06-1G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta) 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 16A, 5V 26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 5 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1725 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 93.75W (Tj) 1.5W (Ta), 93.75W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

BSP135H6906XTSA1
BSP135H6906XTSA1
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
MGSF3454XT1
MGSF3454XT1
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
STB55NF06LT4
STB55NF06LT4
STMicroelectronics
MOSFET N-CH 60V 55A D2PAK
PSMN7R0-60YS,115
PSMN7R0-60YS,115
Nexperia USA Inc.
MOSFET N-CH 60V 89A LFPAK56
FDMS86103L
FDMS86103L
onsemi
MOSFET N-CH 100V 12A/49A 8PQFN
BSS138BKW/DG/B2135
BSS138BKW/DG/B2135
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
IRF3704ZCLPBF
IRF3704ZCLPBF
Infineon Technologies
MOSFET N-CH 20V 67A TO262
IXTQ88N15
IXTQ88N15
IXYS
MOSFET N-CH 150V 88A TO3P
BUK662R4-40C,118
BUK662R4-40C,118
Nexperia USA Inc.
MOSFET N-CH 40V 120A D2PAK
STW20N65M5
STW20N65M5
STMicroelectronics
MOSFET N-CH 650V 18A TO247
FCH099N65S3_F155
FCH099N65S3_F155
onsemi
MOSFET N-CH 650V 30A TO247-3
R6524KNX3C16
R6524KNX3C16
Rohm Semiconductor
650V 24A, TO-220AB, HIGH-SPEED S

Related Product By Brand

FFSB20120A
FFSB20120A
onsemi
DIODE SBD 10A 120V D2PAK-3
1N4148_L99Z
1N4148_L99Z
onsemi
DIODE GEN PURP 100V 200MA DO35
NSB4904DW1T2G
NSB4904DW1T2G
onsemi
SMALL SIGNAL BIPOLAR TRANSISTOR
NTB6410ANT4G
NTB6410ANT4G
onsemi
MOSFET N-CH 100V 76A D2PAK
LC88F52H0AU-CH-H
LC88F52H0AU-CH-H
onsemi
MICROCONTROLLER, 16-BIT, FLASH,
NCS20032DMR2G
NCS20032DMR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8MSOP
SA5230N
SA5230N
onsemi
IC OPAMP GP 1 CIRCUIT 8DIP
74F245SCX
74F245SCX
onsemi
IC TXRX NON-INVERT 5.5V 20SOIC
MC74HC4538AFL2
MC74HC4538AFL2
onsemi
DUAL PRECISION MONOSTABLE MULTIV
CAT28C16AGI12
CAT28C16AGI12
onsemi
IC EEPROM 16KBIT PARALLEL 32PLCC
MOC81113SD
MOC81113SD
onsemi
OPTOISOLATOR 5.3KV TRANS 6-SMD
MOC3023SM
MOC3023SM
onsemi
OPTOISOLATOR 4.17KV TRIAC 6SMD