onsemi-NTD3055-150-1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

Part Number	NTD3055-150-1G	NTD3055-150-1
Manufacturer	onsemi	onsemi
Product Status	Obsolete	Obsolete
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	60 V	-
Current - Continuous Drain (Id) @ 25°C	9A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	10V	-
Rds On (Max) @ Id, Vgs	150mOhm @ 4.5A, 10V	-
Vgs(th) (Max) @ Id	4V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V	-
Vgs (Max)	±20V	-
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V	-
FET Feature	-	-
Power Dissipation (Max)	1.5W (Ta), 28.8W (Tj)	-
Operating Temperature	-55°C ~ 175°C (TJ)	-
Mounting Type	Through Hole	-
Supplier Device Package	I-PAK	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	-

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	150mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	280 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Ta), 28.8W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

onsemi NTD3055-150-1G