NTD25P03L1G
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onsemi NTD25P03L1G

Manufacturer No:
NTD25P03L1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD25P03L1G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 25A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD25P03L1G NTD25P03LG   NTD25P03L1  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 25A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V 4V, 5V 4V, 5V
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 20 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 25 V 1260 pF @ 25 V 1260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 75W (Tj) 75W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package I-PAK DPAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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