NTD18N06-1G
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onsemi NTD18N06-1G

Manufacturer No:
NTD18N06-1G
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTD18N06-1G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 18A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number NTD18N06-1G NTD18N06L-1G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V
Rds On (Max) @ Id, Vgs 60mOhm @ 9A, 10V 65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 22 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 25 V 675 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta), 55W (Tj) 2.1W (Ta), 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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