NTC040N120SC1
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onsemi NTC040N120SC1

Manufacturer No:
NTC040N120SC1
Manufacturer:
onsemi
Package:
Tray
Datasheet:
NTC040N120SC1 Datasheet
ECAD Model:
-
Description:
SIC MOS WAFER SALES 40MOHM 1200V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):348W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
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$18.90
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Similar Products

Part Number NTC040N120SC1 NTC080N120SC1  
Manufacturer onsemi onsemi
Product Status Active Last Time Buy
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V 1112 pF @ 800 V
FET Feature - -
Power Dissipation (Max) 348W (Tc) 178W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Die Die
Package / Case Die Die

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