NTB6413ANG
  • Share:

onsemi NTB6413ANG

Manufacturer No:
NTB6413ANG
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTB6413ANG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 42A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.95
881

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTB6413ANG NTB6410ANG   NTB6411ANG   NTB6412ANG  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 76A (Tc) 77A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 42A, 10V 13mOhm @ 76A, 10V 14mOhm @ 72A, 10V 18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 120 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V 4500 pF @ 25 V 3700 pF @ 25 V 3500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 136W (Tc) 188W (Tc) 217W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FCPF7N60
FCPF7N60
onsemi
MOSFET N-CH 600V 7A TO220F
UPA2721GR-E1-AT
UPA2721GR-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SI7108DN-T1-E3
SI7108DN-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 14A PPAK1212-8
IXFA22N65X2-TRL
IXFA22N65X2-TRL
IXYS
MOSFET N-CH 650V 22A TO263
LND150N3-G-P014
LND150N3-G-P014
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
BUZ73
BUZ73
Infineon Technologies
MOSFET N-CH 200V 7A TO220-3
BUZ73E3046XK
BUZ73E3046XK
Infineon Technologies
MOSFET N-CH 200V 7A TO220-3
IRFS5620TRLPBF
IRFS5620TRLPBF
Infineon Technologies
MOSFET N-CH 200V 24A D2PAK
SFU9220TU_F080
SFU9220TU_F080
onsemi
MOSFET P-CH 200V 3.1A IPAK
DMP3018SFVQ-13
DMP3018SFVQ-13
Diodes Incorporated
MOSFET P-CH 30V 11A PWRDI3333
R6007ENX
R6007ENX
Rohm Semiconductor
MOSFET N-CH 600V 7A TO220FM
RSJ400N10TL
RSJ400N10TL
Rohm Semiconductor
MOSFET N-CH 100V 40A LPTS

Related Product By Brand

1SMB170AT3G
1SMB170AT3G
onsemi
TVS DIODE 170VWM 275VC SMB
MBRD320RLG
MBRD320RLG
onsemi
DIODE SCHOTTKY 20V 3A DPAK
NSV1SS400T5G
NSV1SS400T5G
onsemi
SS SOD523 SWDI 100V TR
KSD1588YTU
KSD1588YTU
onsemi
TRANS NPN 60V 7A TO220F-3
NGTB30N60FWG
NGTB30N60FWG
onsemi
IGBT 600V 60A 167W TO247
MC74LVX126MEL
MC74LVX126MEL
onsemi
IC BUF NON-INVERT 3.6V SOEIAJ-14
MC74LVX50DT
MC74LVX50DT
onsemi
IC BUF NON-INVERT 3.6V 14TSSOP
NLU1GT86AMX1TCG
NLU1GT86AMX1TCG
onsemi
IC GATE XOR 1CH 2-INP 6ULLGA
NCP456RFCCT2G
NCP456RFCCT2G
onsemi
IC PWR SWITCH N-CHAN 1:1 6WLCSP
KA78L10AZTA
KA78L10AZTA
onsemi
FIXED POSITIVE STANDARD REGULATO
LM2931ACD
LM2931ACD
onsemi
IC REG LIN POS ADJ 100MA 8SOIC
NCV8705MT30TCG
NCV8705MT30TCG
onsemi
IC REG LINEAR 3V 500MA 6WDFN