NTB5404NT4G
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onsemi NTB5404NT4G

Manufacturer No:
NTB5404NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTB5404NT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 167A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:167A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 32 V
FET Feature:- 
Power Dissipation (Max):5.4W (Ta), 254W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NTB5404NT4G NTB5405NT4G  
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 167A (Tc) 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V 5.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 32 V 4000 pF @ 32 V
FET Feature - -
Power Dissipation (Max) 5.4W (Ta), 254W (Tc) 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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