NTB30N20
  • Share:

onsemi NTB30N20

Manufacturer No:
NTB30N20
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTB30N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 30A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:81mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2335 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
581

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTB30N20 NTB30N20G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 81mOhm @ 15A, 10V 81mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2335 pF @ 25 V 2335 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 214W (Tc) 2W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

APL502J
APL502J
Microchip Technology
MOSFET N-CH 500V 52A ISOTOP
FDI038AN06A0
FDI038AN06A0
Fairchild Semiconductor
MOSFET N-CH 60V 17A/80A I2PAK
SSM3J135TU,LF
SSM3J135TU,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 3A UFM
TK34E10N1,S1X
TK34E10N1,S1X
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 75A TO220
SQJ443EP-T2_GE3
SQJ443EP-T2_GE3
Vishay Siliconix
P-CHANNEL 40-V (D-S) 175C MOSFET
IRFPC50
IRFPC50
Vishay Siliconix
MOSFET N-CH 600V 11A TO247-3
FDP24AN06LA0
FDP24AN06LA0
onsemi
MOSFET N-CH 60V 7.8A/40A TO220-3
IPSH4N03LA G
IPSH4N03LA G
Infineon Technologies
MOSFET N-CH 25V 90A TO251-3
STD10NM50N
STD10NM50N
STMicroelectronics
MOSFET N-CH 500V 7A DPAK
SI7495DP-T1-E3
SI7495DP-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 13A PPAK SO-8
NP110N03PUG-E1-AY
NP110N03PUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 30V 110A TO263
EFC4612R-W-TR
EFC4612R-W-TR
onsemi
MOSFET N-CH 24V 6A EFCP

Related Product By Brand

1SMB22AT3
1SMB22AT3
onsemi
TVS DIODE 22VWM 35.5VC SMB
NRVB140SFT1
NRVB140SFT1
onsemi
DIODE SCHOTTKY 40V 1A SOD123
MBR140ESFT3G
MBR140ESFT3G
onsemi
DIODE SCHOTTKY 40V 1A SOD123FL
NSVMMBTH10LT1G
NSVMMBTH10LT1G
onsemi
RF TRANS NPN 25V 650MHZ SOT23
2N4403_J05Z
2N4403_J05Z
onsemi
TRANS PNP 40V 0.6A TO92-3
NBVSPA013LN1TAG
NBVSPA013LN1TAG
onsemi
IC OSC VCXO 212MHZ 6CLCC
MC34074AP
MC34074AP
onsemi
IC OPAMP QUAD SGL SUPP HS 14DIP
NIS5420MT5TXG
NIS5420MT5TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
CAT810RSDI-GT3
CAT810RSDI-GT3
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
CAT1027ZI-42-GT3
CAT1027ZI-42-GT3
onsemi
IC SUPERVISOR 2 CHANNEL 8MSOP
MC33761SNT1-025
MC33761SNT1-025
onsemi
IC REG LINEAR 2.5V 80MA 5TSOP
HMHA2801BR2
HMHA2801BR2
onsemi
OPTOISO 3.75KV TRANSISTOR 4SMD