NTB25P06T4G
  • Share:

onsemi NTB25P06T4G

Manufacturer No:
NTB25P06T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTB25P06T4G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 27.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.46
300

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTB25P06T4G NTB25P06T4  
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 27.5A (Ta) 27.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 82mOhm @ 25A, 10V 82mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±15V -
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 1680 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tj) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFR3707ZTRPBF
IRFR3707ZTRPBF
Infineon Technologies
MOSFET N-CH 30V 56A DPAK
BSC014N04LSATMA1
BSC014N04LSATMA1
Infineon Technologies
MOSFET N-CH 40V 32/100A SUPERSO8
SQJ488EP-T2_BE3
SQJ488EP-T2_BE3
Vishay Siliconix
MOSFET N-CH 100V 42A PPAK SO-8
STD11NM60ND
STD11NM60ND
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
PJQ4465AP-AU_R2_000A1
PJQ4465AP-AU_R2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
DMP4065SK3-13
DMP4065SK3-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V TO252 T&R
FDD5690
FDD5690
onsemi
MOSFET N-CH 60V 30A TO252
IRFR010TRLPBF
IRFR010TRLPBF
Vishay Siliconix
MOSFET N-CH 50V 8.2A DPAK
IXTP24N65X2M
IXTP24N65X2M
IXYS
MOSFET N-CH 650V 24A TO220
FDH633605
FDH633605
onsemi
MOSFET N-CH DO-35
R6070JNZ4C13
R6070JNZ4C13
Rohm Semiconductor
600V 70A TO-247, PRESTOMOS WITH
R6009JND3TL1
R6009JND3TL1
Rohm Semiconductor
MOSFET N-CH 600V 9A TO252

Related Product By Brand

MPTE-5RL4G
MPTE-5RL4G
onsemi
TVS DIODE 5VWM 9.4VC AXIAL
MM3Z3V6C
MM3Z3V6C
onsemi
DIODE ZENER 3.6V 200MW SOD323F
1N5262B_T50R
1N5262B_T50R
onsemi
DIODE ZENER 51V 500MW DO35
MMSZ4684
MMSZ4684
onsemi
DIODE ZENER 3.3V 500MW SOD123
EMD5DXV6T5G
EMD5DXV6T5G
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
BCW71_D87Z
BCW71_D87Z
onsemi
TRANS NPN 45V 0.5A SOT23-3
FQP8P10
FQP8P10
onsemi
MOSFET P-CH 100V 8A TO220-3
ASM3P2812AF-08SR
ASM3P2812AF-08SR
onsemi
IC FREQ MOD EMI REDUCTION 8SOIC
MC74AC259MELG
MC74AC259MELG
onsemi
IC LATCH ADDRESS 8BIT 16-SOEIAJ
MC10E143FNR2
MC10E143FNR2
onsemi
IC REGISTER HOLD 9BIT ECL 28PLCC
NCV3163PWR2G
NCV3163PWR2G
onsemi
IC REG BUCK BST ADJ 3.4A 16SOIC
NCV7812ABTG
NCV7812ABTG
onsemi
IC REG LINEAR 12V 1A TO220AB