NTB18N06T4G
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onsemi NTB18N06T4G

Manufacturer No:
NTB18N06T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTB18N06T4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 15A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):48.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NTB18N06T4G NTB18N06LT4G   NTB18N06T4  
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 7.5A, 10V 100mOhm @ 7.5A, 5V 90mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 20 nC @ 5 V 22 nC @ 10 V
Vgs (Max) ±20V ±10V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 440 pF @ 25 V 450 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 48.4W (Tc) 48.4W (Tc) 48.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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