NTB125N02RT4G
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onsemi NTB125N02RT4G

Manufacturer No:
NTB125N02RT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTB125N02RT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 24V 95A/120.5A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):24 V
Current - Continuous Drain (Id) @ 25°C:95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.98W (Ta), 113.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NTB125N02RT4G NTB125N02RT4  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 24 V -
Current - Continuous Drain (Id) @ 25°C 95A (Ta), 120.5A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 20 V -
FET Feature - -
Power Dissipation (Max) 1.98W (Ta), 113.6W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package D2PAK -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -

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