onsemi-NTA4015NT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	238mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	3Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	20 pF @ 5 V
FET Feature:	-
Power Dissipation (Max):	300mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-75, SOT-416
Package / Case:	SC-75, SOT-416

onsemi NTA4015NT1G