NSVMUN5332DW1T1G
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onsemi NSVMUN5332DW1T1G

Manufacturer No:
NSVMUN5332DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NSVMUN5332DW1T1G Datasheet
ECAD Model:
-
Description:
TRANS NPN/PNP PREBIAS 0.25W SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number NSVMUN5332DW1T1G NSVMUN5333DW1T1G   NSVMUN5334DW1T1G   NSVMUN5336DW1T1G   NSVMUN5331DW1T1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) -
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA -
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V -
Resistor - Base (R1) 4.7kOhms 4.7kOhms 22kOhms 100kOhms -
Resistor - Emitter Base (R2) 4.7kOhms 47kOhms 47kOhms 100kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - -
Power - Max 250mW 250mW 250mW 187mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 -

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