NSVMUN5312DW1T3G
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onsemi NSVMUN5312DW1T3G

Manufacturer No:
NSVMUN5312DW1T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NSVMUN5312DW1T3G Datasheet
ECAD Model:
-
Description:
TRANS NPN/PNP 50V BIPO SC88-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number NSVMUN5312DW1T3G NSVMUN5314DW1T3G   NSVMUN5312DW1T2G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Resistor - Base (R1) 22kOhms 10kOhms 22kOhms
Resistor - Emitter Base (R2) 22kOhms 47kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
Frequency - Transition - - -
Power - Max 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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