onsemi-NSVMMBT6517LT1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 50mA, 10V
Power - Max:	225 mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

onsemi NSVMMBT6517LT1G