onsemi-NSVMMBT589LT1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 2V
Power - Max:	310 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

onsemi NSVMMBT589LT1G