onsemi-NSVMMBT5551M3T5G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	60 mA
Voltage - Collector Emitter Breakdown (Max):	160 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	265 mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SOT-723

onsemi NSVMMBT5551M3T5G