onsemi-NSVF5501SKT3G - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	5.5GHz
Noise Figure (dB Typ @ f):	1.9dB @ 1GHz
Gain:	11dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-623F
Supplier Device Package:	SOT-623/SSFP

onsemi NSVF5501SKT3G