onsemi-NSVF4020SG4T1G - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	8V
Frequency - Transition:	16GHz
Noise Figure (dB Typ @ f):	1.8dB @ 1GHz
Gain:	17.5dB
Power - Max:	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 50mA, 5V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	SC-82FL/MCPH4

onsemi NSVF4020SG4T1G