onsemi-NSVF4009SG4T1G - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	1.1dB @ 2GHz
Gain:	17dB
Power - Max:	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 1V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	SC-82FL/MCPH4

onsemi NSVF4009SG4T1G