onsemi-NSVDTC113EM3T5G - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	260 mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SOT-723

onsemi NSVDTC113EM3T5G