onsemi-NSVBSP19AT1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 4mA, 50mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Power - Max:	800 mW
Frequency - Transition:	70MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223 (TO-261)

onsemi NSVBSP19AT1G