onsemi-NSVB1706DMW5T1G - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7kOhms
Resistor - Emitter Base (R2):	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	187mW
Mounting Type:	Surface Mount
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:	SC-88A (SC-70-5/SOT-353)

onsemi NSVB1706DMW5T1G