NSV60600MZ4T3G
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onsemi NSV60600MZ4T3G

Manufacturer No:
NSV60600MZ4T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NSV60600MZ4T3G Datasheet
ECAD Model:
-
Description:
TRANS PNP 60V 6A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):6 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:350mV @ 600mA, 6A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
Power - Max:800 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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In Stock

$0.63
1,168

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Similar Products

Part Number NSV60600MZ4T3G NSV60601MZ4T3G   NSS60600MZ4T3G   NSV60600MZ4T1G  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 6 A 6 A 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A 300mV @ 600mA, 6A 350mV @ 600mA, 6A 350mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V 120 @ 1A, 2V 120 @ 1A, 2V 120 @ 1A, 2V
Power - Max 800 mW 800 mW 800 mW 800 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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