onsemi-NSS35200MR6T1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	35 V
Vce Saturation (Max) @ Ib, Ic:	310mV @ 20mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1.5A, 1.5V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP

onsemi NSS35200MR6T1G