onsemi-NSS12200WT1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	NSS12200WT1G	NSS12200LT1G
Manufacturer	onsemi	onsemi
Product Status	Last Time Buy	Active
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	12 V	12 V
Vce Saturation (Max) @ Ib, Ic	290mV @ 20mA, 1A	180mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 800mA, 1.5 V	250 @ 500mA, 2V
Power - Max	450 mW	460 mW
Frequency - Transition	100MHz	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-88/SC70-6/SOT-363	SOT-23-3 (TO-236)

onsemi NSS12200WT1G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	290mV @ 20mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 800mA, 1.5 V
Power - Max:	450 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363