onsemi-NSS12100M3T5G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	410mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	625 mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SOT-723

onsemi NSS12100M3T5G