NSBC115EPDXV6T1G
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onsemi NSBC115EPDXV6T1G

Manufacturer No:
NSBC115EPDXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NSBC115EPDXV6T1G Datasheet
ECAD Model:
-
Description:
SS SOT563 RSTR XSTR TR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):100kOhms
Resistor - Emitter Base (R2):100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:357mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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In Stock

$0.07
2,644

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Similar Products

Part Number NSBC115EPDXV6T1G NSBC113EPDXV6T1G   NSBC114EPDXV6T1G   NSBC115EDXV6T1G  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) - 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA - 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V - 50V 50V
Resistor - Base (R1) 100kOhms - 10kOhms 100kOhms
Resistor - Emitter Base (R2) 100kOhms - 10kOhms 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V - 35 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA - 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA - 500nA 500nA
Frequency - Transition - - - -
Power - Max 357mW - 500mW 500mW
Mounting Type Surface Mount - Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 - SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 - SOT-563 SOT-563

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