NRVTS10100EMFST1G
  • Share:

onsemi NRVTS10100EMFST1G

Manufacturer No:
NRVTS10100EMFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NRVTS10100EMFST1G Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:720 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.94
515

Please send RFQ , we will respond immediately.

Similar Products

Part Number NRVTS10100EMFST1G NRVTS10100MFST1G   NRVTS12100EMFST1G   NRVTS10100EMFST3G   NRVTS10120EMFST1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 120 V
Current - Average Rectified (Io) 10A 10A 12A 10A 10A
Voltage - Forward (Vf) (Max) @ If 720 mV @ 10 A 720 mV @ 10 A 730 mV @ 12 A 720 mV @ 10 A 820 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 100 V 50 µA @ 100 V 55 µA @ 100 V 50 µA @ 100 V 30 µA @ 120 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MBR360RLG
MBR360RLG
onsemi
DIODE SCHOTTKY 60V 3A DO201AD
NTE5894
NTE5894
NTE Electronics, Inc
R-100PRV 16A CATH CASE
ES2HA R3G
ES2HA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO214AC
RSFDLHR3G
RSFDLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
S3K R7G
S3K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
MBRH24030
MBRH24030
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 240A D67
GL41M/54
GL41M/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
BY229B-600-E3/81
BY229B-600-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
IDB12E120ATMA1
IDB12E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO263-3
1N5407GHA0G
1N5407GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
BAS316/DG/B3,115
BAS316/DG/B3,115
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
RBR3MM30ATFTR
RBR3MM30ATFTR
Rohm Semiconductor
DIODE (RECTIFIER FRD) 30V-VR 3A-

Related Product By Brand

MMBT3904TT1H
MMBT3904TT1H
onsemi
GP TRANSISTOR NPN
FMBS5551
FMBS5551
onsemi
TRANS NPN 160V 0.6A SUPERSOT-6
JDX5010
JDX5010
onsemi
NFET T0220FP JPN
NGB15N41CLT4
NGB15N41CLT4
onsemi
IGBT 440V 15A 107W D2PAK
MC100EP105FAR2
MC100EP105FAR2
onsemi
IC GATE AND/NAND QUAD 2IN 32LQFP
MC74LCX04DTG
MC74LCX04DTG
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74LCX08DT
MC74LCX08DT
onsemi
IC GATE AND 4CH 2-INP 14TSSOP
74ACQ373PC
74ACQ373PC
onsemi
IC LATCH OCTAL D-TYPE 20-DIP
MC74HC4538AF
MC74HC4538AF
onsemi
IC MULTIVIBRATOR 30NS 16SOEIAJ
CAT24C03YI-G
CAT24C03YI-G
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
CS8126-1YDPS7G
CS8126-1YDPS7G
onsemi
IC REG LINEAR 5V 750MA D2PAK-7
6N138SDM
6N138SDM
onsemi
OPTOISO 5KV DARL W/BASE 8SMD