NRVTS10100EMFST1G
  • Share:

onsemi NRVTS10100EMFST1G

Manufacturer No:
NRVTS10100EMFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NRVTS10100EMFST1G Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:720 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.94
515

Please send RFQ , we will respond immediately.

Similar Products

Part Number NRVTS10100EMFST1G NRVTS10100MFST1G   NRVTS12100EMFST1G   NRVTS10100EMFST3G   NRVTS10120EMFST1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 120 V
Current - Average Rectified (Io) 10A 10A 12A 10A 10A
Voltage - Forward (Vf) (Max) @ If 720 mV @ 10 A 720 mV @ 10 A 730 mV @ 12 A 720 mV @ 10 A 820 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 100 V 50 µA @ 100 V 55 µA @ 100 V 50 µA @ 100 V 30 µA @ 120 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SB520-E3/54
SB520-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 5A DO201AD
LSIC2SD120D15
LSIC2SD120D15
Littelfuse Inc.
SCHOTTKY DIODE SIC 1200V 15A
APT40DQ60BG
APT40DQ60BG
Microchip Technology
DIODE GEN PURP 600V 40A TO247
SE20FJHM3/I
SE20FJHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.7A DO219AB
SDT10A100P5-13D
SDT10A100P5-13D
Diodes Incorporated
SCHOTTKY RECTIFIER PDI5 T&R 5K
UPR10/TR13
UPR10/TR13
Microchip Technology
DIODE GEN PURP 100V 2.5A DO216
VS-8EWF06STRR-M3
VS-8EWF06STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A D-PAK
GP10JE-E3/73
GP10JE-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
CDBFR0230L-HF
CDBFR0230L-HF
Comchip Technology
DIODE SCHOTTKY 30V 200MA 1005
RSFKL RTG
RSFKL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
1N4935G B0G
1N4935G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
RLS245TE-11
RLS245TE-11
Rohm Semiconductor
DIODE GEN PURP 220V 200MA LLDS

Related Product By Brand

1.5KE130ARL4
1.5KE130ARL4
onsemi
TRANS VOLTAGE SUPPRESSOR DIODE
NJVMJD50T4G
NJVMJD50T4G
onsemi
TRANS NPN 400V 1A DPAK
IRLW610ATM
IRLW610ATM
onsemi
MOSFET N-CH 200V 3.3A I2PAK
SFT1440-E
SFT1440-E
onsemi
MOSFET N-CH 600V 1.5A TP
2N5457G
2N5457G
onsemi
JFET N-CH 25V 0.31W TO92
UMC5NT2G
UMC5NT2G
onsemi
TRANS BRT DUAL 50V SOT-353
SN74LS242MEL
SN74LS242MEL
onsemi
LS QUAD BUS TRANSCEIVER
MC74HCT00ADTR2
MC74HCT00ADTR2
onsemi
IC GATE NAND 4CH 2-INP 14TSSOP
MC14011BDTR2
MC14011BDTR2
onsemi
IC GATE NAND 4CH 2-INP 14TSSOP
MC100EP58DTG
MC100EP58DTG
onsemi
IC MULTIPLEXER 1 X 2:1 8TSSOP
NCP1239ED65R2G
NCP1239ED65R2G
onsemi
IC OFFLINE SWITCH FLYBACK 7SOIC
L4949DR2
L4949DR2
onsemi
IC REG LIN POS ADJ 100MA 8SOIC