NRVB8H100MFSWFT3G
  • Share:

onsemi NRVB8H100MFSWFT3G

Manufacturer No:
NRVB8H100MFSWFT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NRVB8H100MFSWFT3G Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 8A 100V SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.26
1,921

Please send RFQ , we will respond immediately.

Similar Products

Part Number NRVB8H100MFSWFT3G NRVB8H100MFSWFT1G  
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 8 A 900 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 2 µA @ 100 V 2 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

NTE638
NTE638
NTE Electronics, Inc
D-DAMPER 1600V 2.5A
HS3G R7G
HS3G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
ESGLWH
ESGLWH
Taiwan Semiconductor Corporation
DIODE, SUPER FAST
SBR2M60S1FQ-7
SBR2M60S1FQ-7
Diodes Incorporated
DIODE SBR 60V 2A SOD123F
GP02-35-E3/54
GP02-35-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 3.5KV 250MA DO204
VS-MBRB1045HM3
VS-MBRB1045HM3
Vishay General Semiconductor - Diodes Division
SCHOTTKY - D2PAK
JANTX1N5616US/TR
JANTX1N5616US/TR
Microchip Technology
STD RECTIFIER
JAN1N6623/TR
JAN1N6623/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTXV1N6627U/TR
JANTXV1N6627U/TR
Microchip Technology
RECTIFIER UFR,FRR
GS3M-F1-0000
GS3M-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 3A DO214AB
RGP02-14EHE3/54
RGP02-14EHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.4KV 500MA DO204
FR607-AP
FR607-AP
Micro Commercial Co
DIODE GPP FAST 6A R-6

Related Product By Brand

ESD9X12ST5G
ESD9X12ST5G
onsemi
TVS DIODE 12VWM 23.7VC SOD923
1N5373BG
1N5373BG
onsemi
DIODE ZENER 68V 5W AXIAL
CPH5704-TL-E
CPH5704-TL-E
onsemi
BIP NPN+SBD
NJD35N04G
NJD35N04G
onsemi
TRANS NPN DARL 350V 4A DPAK
MMUN2133LT1G
MMUN2133LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
FDC3512_F095
FDC3512_F095
onsemi
MOSFET N-CH 80V 3A SUPERSOT6
SN74LS86ML1
SN74LS86ML1
onsemi
XOR GATE, TTL, PDSO14
NC7SZ332P6X
NC7SZ332P6X
onsemi
IC GATE OR 1CH 3-INP SC88
NCP81161MNTWG
NCP81161MNTWG
onsemi
IC GATE DRVR HALF-BRIDGE 8DFN
LM2595TADJG
LM2595TADJG
onsemi
IC REG MULT CONFG ADJ 1A TO220-5
NCP170AMX120TCG
NCP170AMX120TCG
onsemi
IC REG LINEAR 1.2V 150MA 4XDFN
H11G1M
H11G1M
onsemi
OPTOISO 4.17KV DARL W/BASE 6DIP