onsemi-NJW44H11G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 4A, 2V
Power - Max:	120 W
Frequency - Transition:	85MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P-3L

onsemi NJW44H11G