onsemi-NJVNJD1718T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 2V
Power - Max:	1.68 W
Frequency - Transition:	80MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVNJD1718T4G