onsemi-NJVMJD47T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	250 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 1A
Current - Collector Cutoff (Max):	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 300mA, 10V
Power - Max:	1.56 W
Frequency - Transition:	10MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVMJD47T4G