onsemi-NJVMJD45H11D3T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	NJVMJD45H11D3T4G	NJVMJD44H11D3T4G
Manufacturer	onsemi	onsemi
Product Status	Last Time Buy	Active
Transistor Type	PNP	NPN
Current - Collector (Ic) (Max)	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	1µA	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 4A, 1V	40 @ 4A, 1V
Power - Max	20 W	20 W
Frequency - Transition	90MHz	85MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK	DPAK

onsemi NJVMJD45H11D3T4G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	20 W
Frequency - Transition:	90MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK