onsemi-NJVMJD31CRLG - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 3A, 4V
Power - Max:	1.56 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVMJD31CRLG