onsemi-NJVMJD3055T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	8V @ 3.3A, 10A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 4A, 4V
Power - Max:	1.75 W
Frequency - Transition:	2MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVMJD3055T4G