onsemi-NJVMJD210T4G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1A, 5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	45 @ 2A, 1V
Power - Max:	1.4 W
Frequency - Transition:	65MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVMJD210T4G