onsemi-NJVMJD148T4G-VF01 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	85 @ 500mA, 1V
Power - Max:	1.75 W
Frequency - Transition:	3MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

onsemi NJVMJD148T4G-VF01